A 30 GHz Power Detector based Reflectometer in 130nm SiGe BiCMOS for Dielectric Spectroscopy

This paper presents the design, implementation, layout and measured results of a 30 GHz power detector based BiCMOS reflectometer for dielectric spectroscopy. The reflectometer has been implemented in 0.13 μm SiGe BiCMOS technology with ft/fmax = 250/340 GHz and has been deployed with an open-ended stub line sensor. It provides an output voltage of 43 mV for the change in dielectric permittivity between ethanol and methanol. The system consumes 58.32 mW of power from 1.8 V and 3.3 V supply. It occupies an area of 2.27 mm2 and it is a prospective system for miniaturized dielectric sensing applications.

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