Lifetime of photo-excited carriers in GaAs studied with optical-pump terahertz-probe method

The ultrafast photoconductive characteristics of GaAs were investigated by the optical-pump terahertz-probe (OPTP) method at room temperature. In our experiment, a significant decrease of the terahertz transmittance has been observed when the time delay between the optical pump pulse and the terahertz probe pulse was adjusted. When the optical excitation occurred on the surface of GaAs, the free carriers increase. Results regressed the experimental curve and obtained the carrier lifetime is 681ps.