A peeling algorithm for extraction of the HBT small-signal equivalent circuit

Direct extraction is the most accurate method for the determination of equivalent-circuits of heterojunction bipolar transistors (HBTs). The method is based on first determining the parasitic elements and then the intrinsic elements analytically. The accuracy and robustness of the whole algorithm therefore is determined by the quality of the extraction of the extrinsic elements. This paper focuses on a new extraction method for the extrinsic capacitances which have proven to be the main source of uncertainty compared to the other extrinsic parameters. Concerning the intrinsic parameters, all the elements are extracted using exact closed-form equations, including exact expressions for the base-collector capacitances, which model the distributed nature of the base. The expressions for the base-collector capacitances are valid for both the hybrid-/spl pi/ and the physics-based T-topology equivalent circuits. Extraction results for InP HBT devices on measured S-parameters up to 100 GHz demonstrate good modeling accuracy.

[1]  G. Dambrine,et al.  A new method for determining the FET small-signal equivalent circuit , 1988 .

[2]  James S. Harris,et al.  Direct extraction of the AlGaAs/GaAs heterojunction bipolar transistor small-signal equivalent circuit , 1991 .

[3]  Dimitris Pavlidis,et al.  Evaluation of the factors determining HBT high-frequency performance by direct analysis of S-parameter data , 1992 .

[4]  D. Tait,et al.  Parameter-extraction method for heterojunction bipolar transistors , 1992, IEEE Microwave and Guided Wave Letters.

[5]  B. Holzapfl,et al.  Analytical parameter extraction of the HBT equivalent circuit with T-like topology from measured S-parameters , 1995 .

[6]  R Reuter,et al.  Direct calculation of the HBT small-signal equivalent circuit with special emphasize to the feedback capacitance , 1995, 1995 25th European Microwave Conference.

[7]  Ce-Jun Wei,et al.  Direct extraction of equivalent circuit parameters for heterojunction bipolar transistors , 1995 .

[8]  P. R. Smith,et al.  Extraction of the InP/GaInAs heterojunction bipolar transistor small-signal equivalent circuit , 1995 .

[9]  A. Samelis,et al.  DC to high-frequency HBT-model parameter evaluation using impedance block conditioned optimization , 1997 .

[10]  P. J. Tasker,et al.  A physical, yet simple, small-signal equivalent circuit for the heterojunction bipolar transistor , 1997 .

[11]  W.R. Curtice,et al.  Comparison of hybrid pi and Tee HBT circuit topologies and their relationship to large signal modeling , 1997, 1997 IEEE MTT-S International Microwave Symposium Digest.

[12]  Bin Li,et al.  A semianalytical parameter-extraction procedure for HBT equivalent circuit , 1998 .

[13]  Matthias Rudolph,et al.  Direct extraction of HBT equivalent-circuit elements , 1999 .

[14]  Zhirun Hu,et al.  Stepping toward standard methods of small-signal parameter extraction for HBTs , 2000 .

[15]  T.S. Horng,et al.  An extrinsic-inductance independent approach for direct extraction of HBT intrinsic circuit parameters , 2001, 2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157).

[16]  Fadhel M. Ghannouchi,et al.  Direct parameter-extraction method for HBT small-signal model , 2002 .

[17]  M. Rudolph,et al.  New extraction algorithm for GaAs-HBTs with low intrinsic base resistance , 2002, 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278).

[18]  D. Ritter,et al.  An analytic expression for the HBT extrinsic base-collector capacitance derived from S-parameter measurements , 2002, 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278).