论文信息 - Threshold Voltage Instability in 4H-SiC MOSFETs with Nitrided Gate Oxide Revealed by Non-relaxation Method - 字舞流文

Threshold Voltage Instability in 4H-SiC MOSFETs with Nitrided Gate Oxide Revealed by Non-relaxation Method

Kenji Fukuda | Shinsuke Harada | Hajime Okumura | Manabu Takei | Dai Okamoto | Mitsuru Sometani | Yoshiyuki Yonezawa | Tetsuo Hatakeyama | Hitoshi Ishimori | Shinji Takasu