Silicon compatible materials for harsh environment sensors

The wide bandgap semiconductors silicon carbide and diamond and the material system Silicon On Insulator (SOI) are compared regarding their suitability as silicon compatible materials to extend the application fields of micromachined sensors to harsh environment conditions especially to high temperatures. The harsh environment conditions are specified by analyzing the demands of automotive and aerospace applications. The physical properties of the material systems are discussed and their technological stage of development is evaluated, especially with respect to the compatibility to standard silicon processes. Furthermore, the commercial availability of the different materials in the form of substrates is considered and a forecast of future developments is attempted. As an example of a harsh environment sensor, a combustion pressure sensor is presented and characterized.

[1]  R. Truche,et al.  ‘SIMOX’ (Separation by Ion Implantation of Oxygen): a Technology for high-temperature silicon sensors , 1990 .

[2]  Mikio Bessho,et al.  SOI Type Pressure Sensor for High Temperature Pressure Measurement , 1994 .

[3]  A. Kurtz,et al.  Characterization of n-type beta -SiC as a piezoresistor , 1993 .

[4]  F. Reidinger,et al.  Single‐crystalline, epitaxial cubic SiC films grown on (100) Si at 750 °C by chemical vapor deposition , 1992 .

[5]  R. Kassing,et al.  A high-speed mass flow sensor with heated silicon carbide bridges , 1998, Proceedings MEMS 98. IEEE. Eleventh Annual International Workshop on Micro Electro Mechanical Systems. An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems (Cat. No.98CH36176.

[6]  S. Babu,et al.  Reactive ion etching of monocrystalline, polycrystalline, and amorphous silicon carbide in CF4/O2 mixtures , 1991 .

[7]  S. Rushworth,et al.  Structural and electronic characterization of β-SiC films on Si grown from mono-methylsilane precursors , 1995 .

[8]  M. Eickhoff,et al.  Rapid plasma etching of cubic SiC using NF3/O2 gas mixtures , 1997 .

[9]  M. A. Tamor,et al.  Piezoresistive microsensors using p-type CVD diamond films , 1994 .

[10]  T. Potter,et al.  Piezoresistivity in vapor-deposited diamond films , 1992 .

[11]  G. Krötz,et al.  New High-Temperature Sensors for Innovative Engine Management , 1998 .

[12]  D. Aslam,et al.  Single-structure heater and temperature sensor using a p-type polycrystalline diamond resistor , 1996, IEEE Electron Device Letters.

[13]  Patrice Rey,et al.  SOI 'SIMOX'; from bulk to surface micromachining, a new age for silicon sensors and actuators , 1995 .

[14]  H. Möller,et al.  A high temperature pressure sensor prepared by selective deposition of cubic silicon carbide on SOI substrates , 1999 .

[15]  O. N. Tufte,et al.  Piezoresistive Properties of Silicon Diffused Layers , 1963 .

[16]  J. Scofield,et al.  Oxygen-free dry etching of α-SiC using dilute SF6:Ar in an asymmetric parallel plate 13.56 MHz discharge , 1998 .