Dark current optimisation for MOVPE grown 2.5 /spl mu/m wavelength InGaAs photodetectors
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The authors have obtained state-of-the-art dark current densities of typical 10–9 A/cm2 (150 K, –10 mV) for 2% mismatched In0.82Ga0.18As photodetectors, by optimising the n-type doping level of the absorbing layer. It is demonstrated that the dark current can be decomposed into three different contributions. The decreased optical response accompanying higher doping levels, remains acceptable.
[1] Ingrid Moerman,et al. Influence of buffer layer and processing on the dark current of 2.5 μm-wavelength 2%-mismatched InGaAs photodetectors , 1997 .
[2] P. Demeester,et al. Characterisation of 2% mismatched InGaAs and InAsP layers, grown on different buffer layers and at different growth temperatures , 1997 .