Growth and Optical Properties of CdS:(Cd, Zn)S Strained Layer Superlattices

Cubic CdS:CdxZn1-xS strained layer superlattices with x in the region of 0.3 have been grown on GaAs by low pressure metal organic vapour phase epitaxy (MOVPE) and characterised by X-ray diffraction, photoluminesence and optical absorption measurements. Close lattice matching to the GaAs substrates has been achieved and, for short period samples, blue shifted excitonic emission and energy gaps have been observed. It may be, however, that extremely short periods, in the region of a few tens of Å, are necessary in order to obtain acceptable optical quality in this system.