Phase change materials: From material science to novel storage devices
暂无分享,去创建一个
[1] D. A. Baker,et al. Application of bond constraint theory to the switchable optical memory material Ge2Sb2Te5. , 2006, Physical review letters.
[2] Guo-Fu Zhou,et al. Phase-Change Media for High-Numerical-Aperture and Blue-Wavelength Recording , 2001 .
[3] Noboru Yamada,et al. Erasable Phase-Change Optical Materials , 1996 .
[4] M. Lankhorst,et al. Low-cost and nanoscale non-volatile memory concept for future silicon chips , 2005, Nature materials.
[5] Li,et al. Direct Measurements of Free Crystal Growth in Deeply Undercooled Melts of Semiconducting Materials. , 1996, Physical review letters.
[6] James R. Chelikowsky,et al. Local structure of liquid GeTe via neutron scattering and ab initio simulations , 2002 .
[7] Bell,et al. Conversion-electron extended x-ray-absorption fine-structure measurements of ion-damaged GaAs. , 1987, Physical review. B, Condensed matter.
[8] A. Pirovano,et al. Electronic switching in phase-change memories , 2004, IEEE Transactions on Electron Devices.
[9] Guo-Fu Zhou,et al. Materials aspects in phase change optical recording , 2001 .
[10] Matthias Wuttig,et al. Laser induced crystallization of amorphous Ge2Sb2Te5 films , 2001 .
[11] Matthias Wuttig,et al. Kinetics of crystal nucleation in undercooled droplets of Sb- and Te-based alloys used for phase change recording , 2005 .
[12] M. Wuttig,et al. The Dependence of Crystal Structure of Te‐Based Phase‐Change Materials on the Number of Valence Electrons , 2004 .
[13] L. V. Pieterson,et al. Te-free, Sb-based phase-change materials for high-speed rewritable optical recording , 2003 .
[14] Noboru Yamada,et al. Structural basis for the fast phase change of Ge2Sb2Te5: Ring statistics analogy between the crystal and amorphous states , 2006 .
[15] Michael Thorpe,et al. Continuous deformations in random networks , 1983 .
[16] Stefan Blügel,et al. Unravelling the interplay of local structure and physical properties in phase-change materials , 2006 .
[17] Sadao Adachi,et al. Optical Constants of Crystalline and Amorphous Semiconductors , 1999 .
[18] J. H. Coombs,et al. Laser‐induced crystallization phenomena in GeTe‐based alloys. II. Composition dependence of nucleation and growth , 1995 .
[19] J. Tominaga,et al. Understanding the phase-change mechanism of rewritable optical media , 2004, Nature materials.
[20] Ki-Bum Kim,et al. Lower Voltage Operation of a Phase Change Memory Device with a Highly Resistive TiON Layer , 2004 .
[21] Matthias Wuttig,et al. Towards a universal memory? , 2005, Nature materials.
[22] S. Ovshinsky. Reversible Electrical Switching Phenomena in Disordered Structures , 1968 .
[23] K. Yu,et al. CHARACTERIZATION OF THE LOCAL STRUCTURE OF AMORPHOUS GAAS PRODUCED BY ION IMPLANTATION , 1998 .
[24] M. Wuttig,et al. Atomic force microscopy measurements of crystal nucleation and growth rates in thin films of amorphous Te alloys , 2004 .