20-µW operation of an a-IGZO TFT-based RFID chip using purely NMOS “active” load logic gates with ultra-low-consumption power

We fabricated the first RFID chip using amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) on a glass substrate. Logic gates with low-consumption current (∼1 nA) and steep on/off switching was also proposed. The logic circuit achieved small enough power consumption (20 µW) for wireless operation and a wireless operation of the RFID tag was demonstrated.