Ruthenium gate electrodes on SiO2 and HfO2: Sensitivity to hydrogen and oxygen ambients
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Luigi Pantisano | Tom Schram | Andre Stesmans | Geoffrey Pourtois | S. De Gendt | David P. Brunco | Valery V. Afanas'ev | Zilan Li | Sheron Shamuilia | T. Schram | G. Pourtois | J. Lisoni | A. Stesmans | D. Brunco | L. Pantisano | A. Akheyar | S. Gendt | Zilan Li | V. Afanas'ev | Judit G. Lisoni | Amal Akheyar | S. Shamuilia
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