Defect-mediated ferroelectric domain depinning of polycrystalline BiFeO3 multiferroic thin films

The ferroelectric domain depinning in a polycrystalline BiFeO3 film is studied by a defect-mediated diffusion mechanism driven by a secondary re-oxidation anneal. The presence of defect complexes (oxygen-vacancy-associated dipoles) responsible for pinning is discussed from the current-voltage (I-V) characteristics of the film. Dissociation of these complexes by re-oxidation anneal produces the effective depinning of domains in the material. The released oxygen vacancies would be compensated at the re-oxidized state due to the valence change of Fe2+ to Fe3+. Improvement on domain mobility results in a larger contribution to ferroelectric switching, showing a room-temperature remanent polarization of 67 μC cm−2.

[1]  M. Calzada,et al.  Solution Synthesis of BiFeO3 Thin Films onto Silicon Substrates with Ferroelectric, Magnetic, and Optical Functionalities , 2013 .

[2]  C. M. Folkman,et al.  The Nature of Polarization Fatigue in BiFeO3 , 2011, Advanced materials.

[3]  Xiaoqing Pan,et al.  Origin of suppressed polarization in BiFeO3 films , 2010 .

[4]  M. Kosec,et al.  Strong ferroelectric domain-wall pinning in BiFeO3 ceramics , 2010 .

[5]  F. Zhuge,et al.  Resistance switching in polycrystalline BiFeO3 thin films , 2010 .

[6]  Q. Jia,et al.  Oxygen concentration and its effect on the leakage current in BiFeO3 thin films , 2010 .

[7]  John Wang,et al.  Orientation dependence of ferroelectric behavior of BiFeO3 thin films , 2009 .

[8]  James F. Scott,et al.  Physics and Applications of Bismuth Ferrite , 2009 .

[9]  T. Grande,et al.  On the Thermodynamic Stability of BiFeO3 , 2009 .

[10]  Sergei V. Kalinin,et al.  Ferroelectric domain wall pinning at a bicrystal grain boundary in bismuth ferrite , 2008 .

[11]  Yurong Yang,et al.  Aging-induced double ferroelectric hysteresis loops in BiFeO3 multiferroic ceramic , 2007 .

[12]  M. Viret,et al.  Very large spontaneous electric polarization in BiFeO3 single crystals at room temperature and its evolution under cycling fields , 2007, 0706.1681.

[13]  S. Fusil,et al.  Room-temperature coexistence of large electric polarization and magnetic order in Bi Fe O 3 single crystals , 2007, 0706.0404.

[14]  T. Zhao,et al.  Multiferroic BiFeO3 films: domain structure and polarization dynamics , 2006 .

[15]  C. Nan,et al.  Multiferroic BiFeO3 thin films prepared via a simple sol-gel method , 2006 .

[16]  J. Neaton,et al.  First-principles study of spontaneous polarization in multiferroic BiFeO 3 , 2004, cond-mat/0407679.

[17]  Junling Wang,et al.  Epitaxial BiFeO3 thin films on Si , 2004 .

[18]  R. Ramesh,et al.  Epitaxial BiFeO3 Multiferroic Thin Film Heterostructures , 2003, Science.

[19]  M. Calzada,et al.  Processing effects on the microstructure and ferroelectric properties of strontium bismuth tantalate thin films , 2002 .

[20]  D. Dimos,et al.  Alignment of defect dipoles in polycrystalline ferroelectrics , 1995 .

[21]  P. V. Dressendorfer,et al.  Device modeling of ferroelectric capacitors , 1990 .

[22]  K. A. Müller,et al.  Structure of transition-metal—oxygen-vacancy pair centers , 1979 .

[23]  Robert Gerson,et al.  Dielectric hysteresis in single crystal BiFeO3 , 1970 .