Effects of Ar Vs. O2 Ambient On Pulsed-Laser-Deposited Ga-Doped ZnO
暂无分享,去创建一个
David C. Look | Kevin D. Leedy | Burhan Bayraktaroglu | Yong-Hang Zhang | Robin C. Scott | D. Look | Yong-Hang Zhang | K. Leedy | B. Bayraktaroglu | R. Scott
[1] J. Pérez,et al. Correlation between Zn vacancies and photoluminescence emission in ZnO films , 2006 .
[2] X. W. Sun,et al. Correlation between plasma dynamics and thin film properties in pulsed laser deposition , 1997 .
[3] S. Kang,et al. Influence of the substrate temperature on the optical and electrical properties of Ga-doped ZnO thin films fabricated by pulsed laser deposition , 2009 .
[4] R. Yakimova,et al. Study of annealing influence on electrical and morphological properties of ZnO:Ga thin films , 2006 .
[5] David C. Look,et al. Highly conductive ZnO grown by pulsed laser deposition in pure Ar , 2010 .
[6] Chantal Boulmer-Leborgne,et al. Pulsed-laser deposition of ZnO and related compound thin films for optoelectronics , 2008, High-Power Laser Ablation.
[7] Sang Hoon Oh,et al. Influence of thermal annealing ambient on Ga-doped ZnO thin films , 2007 .
[8] David J. Smith,et al. Influence of Substrate Temperature and Post-Deposition Annealing on Material Properties of Ga-Doped ZnO Prepared by Pulsed Laser Deposition , 2011 .
[9] David C. Look,et al. Mobility analysis of highly conducting thin films: Application to ZnO , 2010 .
[10] Bixia Lin,et al. Green luminescent center in undoped zinc oxide films deposited on silicon substrates , 2001 .
[11] Cai‐Feng Wang,et al. Effects of oxygen pressure on n-ZnO/p-Si heterojunctions fabricated using pulsed laser deposition , 2007 .
[12] A. Janotti,et al. Native point defects in ZnO , 2007 .
[13] Sang Yeol Lee,et al. Effect of rapid thermal annealing on electrical and optical properties of Ga doped ZnO thin films prepared at room temperature , 2006 .
[14] Sang Hyuck Bae,et al. Effects of native defects on optical and electrical properties of ZnO prepared by pulsed laser deposition , 2000 .
[15] Beng Kang Tay,et al. Structural, electrical and optical properties of Al-doped ZnO thin films prepared by filtered cathodic vacuum arc technique , 2004 .
[16] G. Hubler,et al. Pulsed Laser Deposition of Thin Films , 2003, Handbook of Laser Technology and Applications.
[17] A. Henry,et al. Contribution of free-electron recombination to the luminescence spectra of thick GaN films grown by hydride vapor phase epitaxy , 1999 .
[18] H. Kavak,et al. Structural and optical properties of zinc oxide thin films prepared by spray pyrolysis method , 2006 .
[19] Jürgen Christen,et al. Bound exciton and donor–acceptor pair recombinations in ZnO , 2004 .
[20] Hyoun Woo Kim,et al. Effects of annealing on structure, resistivity and transmittance of Ga doped ZnO films , 2007 .
[21] Yujia Zeng,et al. Carrier concentration dependence of band gap shift in n-type ZnO:Al films , 2007 .
[22] K. Ebihara,et al. Investigation of Transparent Conductive Oxide Al-Doped ZnO Films Produced by Pulsed Laser Deposition , 2005 .
[23] T. Yao,et al. Defect characterization in epitaxial ZnO/epi-GaN/Al2O3 heterostructures: transmission electron microscopy and triple-axis X-ray diffractometry , 2000 .
[24] G. Ceder,et al. First-principles study of native point defects in ZnO , 2000 .
[25] D. Look,et al. Ga-related photoluminescence lines in Ga-doped ZnO grown by plasma-assisted molecular-beam epitaxy , 2009 .
[26] K. S. Lee,et al. Electrical, optical and structural properties of transparent and conducting ZnO thin films doped with Al and F by rf magnetron sputter , 2005 .
[27] H. Koinuma,et al. Lateral grain size and electron mobility in ZnO epitaxial films grown on sapphire substrates , 2000 .