Time-Dependent Dielectric Breakdown of 4H-SiC MOS Capacitors and DMOSFETs
暂无分享,去创建一个
K. Matocha | G. Dunne | S. Soloviev | K. Matocha | G. Dunne | R. Beaupre | R. Beaupre | S. Soloviev
[1] J. Suehle. Ultrathin gate oxide reliability: physical models, statistics, and characterization , 2002 .
[2] Kenji Fukuda,et al. Correlation between reliability of thermal oxides and dislocations in n-type 4H-SiC epitaxial wafers , 2006 .
[3] P. Chaparala,et al. A new physics-based model for time dependent dielectric breakdown , 1996, Proceedings of the 7th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis.
[4] A. Agarwal,et al. Temperature dependence of Fowler-Nordheim current in 6H- and 4H-SiC MOS capacitors , 1997, IEEE Electron Device Letters.
[5] N. Goldsman,et al. Time-Dependent Bias Stress-Induced Instability of SiC MOS Devices , 2006 .
[6] D. J. Dumin,et al. Correlation of stress-induced leakage current in thin oxides with trap generation inside the oxides , 1993 .
[7] Guido Groeseneken,et al. New insights in the relation between electron trap generation and the statistical properties of oxide breakdown , 1998 .
[8] A. Hefner,et al. Reliability of SiC MOS devices , 2004 .
[9] M. Imaizumi,et al. Successful enhancement of lifetime for SiO/sub 2/ on 4H-SiC by N/sub 2/O anneal , 2004, IEEE Electron Device Letters.
[10] Prasad Chaparala,et al. Field and temperature acceleration of time-dependent dielectric breakdown in intrinsic thin SiO/sub 2/ , 1994, Proceedings of 1994 IEEE International Reliability Physics Symposium.
[11] A. Agarwal,et al. Reliability of High Voltage 4H-SiC MOSFET Devices , 2006 .
[12] J. Cooper,et al. Time-dependent-dielectric-breakdown measurements of thermal oxides on n-type 6H-SiC , 1999 .
[13] James W. Kretchmer,et al. Silicon carbide MOSFET technology , 1996 .
[14] J. W. Palmour,et al. Insulator investigation on SiC for improved reliability , 1999 .
[15] P. Friedrichs,et al. Reliability of metal–oxide–semiconductor capacitors on nitrogen implanted 4H-silicon carbide , 1998 .
[16] Martin Pölzl,et al. Ultra-thick gate oxides: charge generation and its impact on reliability , 2001, Microelectron. Reliab..
[17] J. Suehle,et al. Ultra-Fast Characterization of Transient Gate Oxide Trapping in SiC Mosfets , 2007, 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual.
[18] Temperature-dependent tunneling through thermally grown SiO2 on n-type 4H– and 6H–SiC , 2000 .
[19] K. Fukuda,et al. Effects of n-type 4H-SiC epitaxial wafer quality on reliability of thermal oxides , 2004 .
[20] D. Arnold,et al. Impact ionization, trap creation, degradation, and breakdown in silicon dioxide films on silicon , 1993 .
[21] J. Nasadoski,et al. DC and Transient Performance of 4H-SiC Double-Implant MOSFETs , 2008, IEEE Transactions on Electron Devices.