A low-voltage 4th order RF bandpass filter structure based on a two magnetically-coupled resonators prototype is presented. Each resonator is built using on-chip spiral inductors and accumulation-mode PMOS capacitors to provide center frequency tuning. The proposed architecture is using electric coupling to emulate the effect of the transformer thus providing bandwidth tuning with small passband ripple. The filter has been implemented in HP0.5 µm CMOS process and occupies an area of 0.15mm2. It consumes 16mA from a single 2.7V supply at a center frequency of 1.84GHz and a bandwidth of 80MHz while providing a passband gain of 9dB. The measured output 1 dB compression point, and output noise power spectral density are -40dBm and -161dBm/√Hz, respectively. This results in a 1dB compression dynamic range of 42dB.
[1]
William B. Kuhn,et al.
Q-enhanced LC bandpass filters for integrated wireless applications
,
1998
.
[2]
Anatol I. Zverev,et al.
Handbook of Filter Synthesis
,
1967
.
[3]
William B. Kuhn,et al.
A 200 MHz CMOS Q-enhanced LC bandpass filter
,
1996
.
[4]
Yannis Tsividis,et al.
A Si 1.8 GHz RLC filter with tunable center frequency and quality factor
,
1996,
IEEE J. Solid State Circuits.
[5]
Y. Tsividis,et al.
A 1.9 GHz Si active LC filter with on-chip automatic tuning
,
2001,
2001 IEEE International Solid-State Circuits Conference. Digest of Technical Papers. ISSCC (Cat. No.01CH37177).