A novel CuxSiyO resistive memory in logic technology with excellent data retention and resistance distribution for embedded applications

A new Cu<inf>x</inf>Si<inf>y</inf>O resistive memory, which is different from Cu-doped SiO<inf>2</inf> or CuxO binary oxide, is integrated successfully in standard logic technology for the first time. Key breakthrough is that data retention (10 years@ 150°C), resistance distribution (with 50x window@125 °C ) and disturbance immunity significantly improved with integration simplicity advantage, as demonstrated on a 1Mb test chip. The activation energy of Cu vacancy migration in Cu<inf>x</inf>Si<inf>y</inf>O increases by 5 times than that in Cu<inf>x</inf>O, giving rise to the great performance improvement. The solution is promising for both high density and low cost embedded nonvolatile memory (NVM) applications.