Proposed Phase-Change Memory with a Step-Like Channel for High-Performance Multi-State Storage
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Lateral rectangular (R-) and step-like (S-) channel phase-change memory (PCM) cell structures are numerically analyzed for multi-state storage based on their temperature distributions and their programming characteristics. The S-PCM cell is characterized by the sequentially melted sub-channel and step-like programming characteristics. From the viewpoint of the performance for multi-state storage, the step-like characteristics indicate high controllability for its application of multi-state storage.
[1] S. Ovshinsky. Optical Cognitive Information Processing – A New Field , 2004 .
[2] Sumio Hosaka,et al. A Novel Lateral Phase-Change Random Access Memory Characterized by Ultra Low Reset Current and Power Consumption , 2006 .
[4] You Yin,et al. Finite Element Analysis of Dependence of Programming Characteristics of Phase-Change Memory on Material Properties of Chalcogenides , 2006 .
[5] Andrea L. Lacaita,et al. Phase change memories: State-of-the-art, challenges and perspectives , 2005 .