Energy barriers at interfaces between (100) InxGa1−xAs (0≤x≤0.53) and atomic-layer deposited Al2O3 and HfO2
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P. Hurley | A. Stesmans | E. O'Connor | A. Delabie | G. Brammertz | I. Povey | M. Pemble | S. Newcomb | V. Afanas'ev | S. Sionke | A. O'Mahony