论文信息 - Improvement of 4H–SiC selective epitaxial growth by VLS mechanism using Al and Ge-based melts - 字舞流文

Improvement of 4H–SiC selective epitaxial growth by VLS mechanism using Al and Ge-based melts

G. Ferro | J. Pezoldt | Y. Monteil | M. Lazar | P. Godignon | B. Nsouli | M. Soueidan | C. Jacquier