A Quick Experimental Technique In Estimating The Cumulative Plasma Charging Current with MOSFET and Determining The Reliability of The Protection Diode In The Plasma Ambient

We developed a quick experimental technique for evaluating the cumulative plasma charging current density with MOSFETs. A one second stress at 9 volts for gate oxide thickness of 100A is sufficient to force the Fowler-Nordheim tunneling condition to reveal the plasma-induced oxide damages to the MOSFET, then the oxide damages can be easily characterized by I-V meansurement. In addition, we suggested an experimental method in estimating the limitation and reliability of the protection diode in the plasma ambient under various plasma charging conditions.