GaAs MESFET physical models for process-oriented design
暂无分享,去创建一个
[1] G. Salmer,et al. Two-dimensional simulation of submicrometer GaAs MESFETs: surface effects and optimization of recessed gate structures , 1988 .
[2] C. Snowden,et al. Large-signal modeling of GaAs MESFET operation , 1983, IEEE Transactions on Electron Devices.
[3] Giovanni Ghione,et al. Physical modeling of GaAs MESFETs in an integrated CAD environment: from device technology to microwave circuit performance , 1989 .
[4] M. Tomizawa,et al. Drain avalanche breakdown in gallium arsenide MESFET's , 1988 .
[5] Kazushige Horio,et al. Numerical simulation of GaAs MESFET's on the semi-insulting substrate compensated by deep traps , 1988 .
[6] G. Haddad,et al. Quasi-two-dimensional modeling of GaAs MESFET's , 1987, IEEE Transactions on Electron Devices.
[7] Christopher M. Snowden,et al. Two-dimensional numerical simulation of trapping phenomena in the substrate of GaAs MESFET's , 1990 .
[8] M. Shur,et al. I—V characteristics of GaAs MESFET with nonuniform doping profile , 1980, IEEE Transactions on Electron Devices.
[9] B. B. Darling,et al. Generalized gradual channel modeling of field-effect transistors , 1988 .
[10] M. J. Howes,et al. A new model for the dual-gate GaAs MESFET , 1989 .
[11] P. Ladbrooke,et al. Low-field low-frequency dispersion of transconductance in GaAs MESFETs with implications for other rate-dependent anomalies , 1988 .
[12] E. Constant,et al. Modeling of a submicrometer gate field‐effect transistor including effects of nonstationary electron dynamics , 1980 .
[13] Christopher M. Snowden,et al. Quasi-two-dimensional MESFET simulations for CAD , 1989 .
[14] M. Reiser,et al. A two-dimensional numerical FET model for DC, AC, and large-signal analysis , 1973 .
[15] Michael J. Howes,et al. A large-signal physical MESFET model for computer-aided design and its applications , 1989 .
[16] R. Trew,et al. A modeling technique for characterizing ion-implanted material using C- V and DLTS data , 1984 .