Mechanism and observation of Mott transition in VO2-based two- and three-terminal devices
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Gyungock Kim | Byung-Gyu Chae | Kwang-Yong Kang | Yong-Sik Lim | Gyungock Kim | D. Youn | B. Chae | K. Kang | S. Maeng | Hyun-Tak Kim | Doo-Hyeb Youn | Sunglyul Maeng | Y. Lim | Hyun-Tak Kim
[1] P. Fazekas,et al. Lecture notes on electron correlation and magnetism , 1999 .
[2] H. Sakata,et al. Electrical conduction in V2O5-NiO-TeO2 glasses , 1998 .
[3] N. M. Plakida,et al. High Temperature Superconductivity , 1990, High Temperature Superconductivity.
[4] D. Youn,et al. Growth optimization and electrical characteristics of VO2 films on amorphous SiO2/Si substrates , 2004 .
[5] Masatoshi Imada,et al. Metal-insulator transitions , 1998 .
[6] Y. Muraoka,et al. Photoemission study of the metal-insulator transition inVO2/TiO2(001): Evidence for strong electron-electron and electron-phonon interaction , 2004 .
[7] Koichi Kitazawa,et al. Advances in superconductivity , 1989 .
[8] J. P. Remeika,et al. Mott Transition in Cr-DopedV2O3 , 1969 .
[9] R. Walser,et al. The effect of interfaces on electronic switching in VO2 thin films , 1982 .
[10] Extended Brinkman-Rice Picture and Its Application to High-Tc Superconductors , 2001, cond-mat/0110112.
[11] Alexander Pergament,et al. Electrical switching and Mott transition in VO2 , 2000 .
[12] S. Kruchinin,et al. New Trends in Superconductivity , 2002 .
[13] R. Srivastava,et al. Raman Spectrum of Semiconducting and Metallic V O 2 , 1971 .
[14] H. Minami,et al. Temperature Dependence of Optical Spectra for the CDW Gap and Optical Phonons in BaBiO3 , 1995 .
[15] R. Zimmermann,et al. Strong hybridization in vanadium oxides: evidence from photoemission and absorption spectroscopy , 1998 .
[16] William F. Brinkman,et al. Application of Gutzwiller's Variational Method to the Metal-Insulator Transition , 1970 .
[17] P. J. Hood,et al. Formation and characterization of grain-oriented VO2 thin films , 1989 .
[18] F. J. Morin,et al. Oxides Which Show a Metal-to-Insulator Transition at the Neel Temperature , 1959 .
[19] J. Duchêne. Direct infrared measurements of filament transient temperature during switching in vanadium oxide film devices , 1975 .
[20] Allen,et al. Wentzcovitch et al. reply. , 1994, Physical review letters.
[21] E. Baran,et al. IR spectra of VO2 and V2O3 , 1997 .
[22] A. Mourachkine. High-Temperature Superconductivity in Cuprates , 2002 .
[23] D. Adler,et al. THEORY OF SEMICONDUCTOR-TO-METAL TRANSITIONS , 1967 .
[24] Tokura,et al. Current-induced insulator-metal transition and pattern formation in an organic charge-transfer complex , 1999, Science.
[25] S. M. Sze,et al. Physics of semiconductor devices , 1969 .
[26] Zhang,et al. Mott transition in the d= , 1993, Physical review letters.
[27] Okada,et al. Filling dependence of electronic properties on the verge of metal-Mott-insulator transition in Sr1-xLaxTiO3. , 1993, Physical review letters.
[28] R. Singh,et al. Pulsed laser deposition of oriented VO2 thin films on R‐cut sapphire substrates , 1993 .
[29] Alexander Pergament,et al. The effect of electric field on metal-insulator phase transition in vanadium dioxide , 2002 .
[30] P. Schilbe. Raman scattering in VO2 , 2002 .
[31] Pouget,et al. Comment on "VO2: Peierls or Mott-Hubbard? A view from band theory" , 1994, Physical Review Letters.
[32] Nevill Mott,et al. Metal-Insulator Transition , 1968 .
[33] Allen,et al. VO2: Peierls or Mott-Hubbard? A view from band theory. , 1994, Physical review letters.
[34] John B. Goodenough,et al. Direct cation- -cation interactions in several oxides , 1960 .