A Ku-band oscillator subsystem using a broadband GaAs MMIC push-pull amplifier/doubler
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The design and performance results of a Ku-band voltage controlled oscillator subsystem using a broadband GaAs MMIC (monolithic microwave integrated circuit) push-pull amplifier as a frequency doubler are described. The subsystem utilizes both GaAs MMIC and Si bipolar technologies to achieve the desired performance objectives. The oscillator subsystem is tunable over the 14-18-GHz frequency range with a minimum output power of 18 dBm and a phase noise of -88 dBc/Hz at 100-kHz offset from the carrier over a 0 to +65 degrees C temperature range.<<ETX>>
[1] C.C. Yang,et al. 12-40 GHz low harmonic distortion and phase noise performance of GaAs heterojunction bipolar transistors , 1988, 10th Annual IEEE (GaAs IC) Symposium, Gallium Arsenide Integrated Circuit. Technical Digest 1988..
[2] D. Smith,et al. 25-42 GHz GaAs heterojunction bipolar transistor low phase noise push-push VCOs , 1989, IEEE MTT-S International Microwave Symposium Digest.
[3] D. A. Boyd. Low Phase Noise X/Ku-Band VCO , 1987, 1987 IEEE MTT-S International Microwave Symposium Digest.