Photoconductive gain and generation‐recombination noise in multiple‐quantum‐well infrared detectors
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[1] Naresh Chand,et al. Large photoconductive gain in quantum well infrared photodetectors , 1990 .
[2] J. M. Kuo,et al. Photoexcited escape probability, optical gain, and noise in quantum well infrared photodetectors , 1992 .
[3] Albert Rose,et al. Concepts in photoconductivity and allied problems , 1963 .
[4] J. M. Kuo,et al. Extended long‐wavelength λ=11–15‐μm GaAs/AlxGa1−xAs quantum‐well infrared photodetectors , 1991 .
[5] Hui C. Liu,et al. Noise gain and operating temperature of quantum well infrared photodetectors , 1992 .
[6] B. F. Levine,et al. High sensitivity low dark current 10 μm GaAs quantum well infrared photodetectors , 1990 .
[7] Hui Chun Liu,et al. Photoconductive gain mechanism of quantum‐well intersubband infrared detectors , 1992 .
[8] P. Ho,et al. Low dark current step‐bound‐to‐miniband transition InGaAs/GaAs/AlGaAs multiquantum‐well infrared detector , 1992 .
[9] Kwong-Kit Choi,et al. Infrared absorption and photoconductive gain of quantum well infrared photodetectors , 1992 .
[10] B. K. Janousek,et al. High‐detectivity GaAs quantum well infrared detectors with peak responsivity at 8.2 μm , 1990 .