Electrical activation and lattice location of B and Ga impurities implanted in Si
暂无分享,去创建一个
A. Piro | M. Grimaldi | E. Rimini | E. Napolitani | G. Bisognin | L. Romano | A. Spada
[1] S. Scalese,et al. Carrier concentration and mobility in B doped Si1−xGex , 2003 .
[2] Yifeng Fu,et al. Hall factor and drift mobility for hole transport in strained Si1−xGex alloys , 1997 .
[3] M. Vollmer,et al. Boron detection using the nuclear reaction 11B(p, α)2α , 1996 .
[4] Szmulowicz. Calculation of the mobility and the Hall factor for doped p-type silicon. , 1986, Physical review. B, Condensed matter.
[5] E. Kasper,et al. Dependence of hole transport on Ga doping in Si molecular beam epitaxy layers , 1986 .
[6] K. Jones,et al. Boron Solubility Limits Following Low Temperature Solid Phase Epitaxial Regrowth , 2001 .
[7] Michael Nastasi,et al. Handbook of modern ion beam materials analysis , 1995 .