论文信息 - Mobility in high-K metal gate UTBB-FDSOI devices: From NEGF to TCAD perspectives

Mobility in high-K metal gate UTBB-FDSOI devices: From NEGF to TCAD perspectives

This paper aims to review important theoretical and experimental aspects of both electrostatics and channel mobility in High-K Metal Gate UTBB-FDSOI MOSFETs. A simulation chain, including advanced quantum solvers, and semi-empirical Technology Computer Assisted Design (TCAD) tools is presented.

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