论文信息 - High‐speed integrated heterojunction field‐effect transistor photodetector: A gated photodetector

High‐speed integrated heterojunction field‐effect transistor photodetector: A gated photodetector

A new concept for a high‐speed photodetector is described which promises very low noise with avalanche gain. The detector is constructed as an integrated circuit element in the heterojunction field‐effect transistor technology and utilizes a unique n‐n heterojunction interface formed by either metalorganic chemical vapor deposition or molecular beam epitaxy growth techniques. The degree of avalanching is controlled via an electrical third terminal.

G. W. Taylor | J. G. Simmons

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