Effects of La2O3 incorporation in HfO2 gated nMOSFETs on low-frequency noise

Abstract The effect of La 2 O 3 incorporation on the spatial trap distribution in HfO 2 gate dielectrics is investigated. The incorporation of La 2 O 3 in HfO 2 dielectric has been found to improve the effective mobility in addition to reduced interface-state density. The trap distribution analysis in the HfO 2 layer extracted by combining the charge pumping (CP) method and the low-frequency noise (LFN) method has revealed significant reduction in the amount of traps at HfO 2 /SiO 2 -interlayer interface and in the HfO 2 layer by La 2 O 3 incorporation.

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