Surge current capabilities and isothermal current–voltage characteristics of high-voltage 4H-SiC junction barrier Schottky rectifiers

Isothermal forward current–voltage characteristics of high-voltage 4H-SiC junction barrier Schottky rectifiers (JBS) have been studied for the first time. Isothermal characteristics were measured with JBS having a blocking voltage of 1700 V up to a current density j  ≈  4200 A cm−2 in the temperature range 297–460 K. Quasi-isothermal current–voltage characteristics of these devices were studied with injection of minority carriers (holes) up to j  ≈  7200 A cm−2 and ambient temperatures of 297 and 460 K. The isothermal forward current–voltage characteristics make it possible to numerically calculate (for example, by an iteration procedure) the overheating in an arbitrary operation mode.

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