Oxynitride Formation Processes on Si(001) Studied by Means of Reflectance Difference Spectroscopy

We investigated nitric oxide (NO) adsorption processes on Si(001) at temperatures of 110–873 K at a pressure of 1.0×10-5 Pa by reflectance difference spectroscopy (RDS). The transition of the growth modes between Langmuir-type adsorption and two-dimensional oxide island growth was identified from the spectral line shape obtained with RDS, and from Arrhenius plots of the time constant for reaction in the growth of a monolayer oxynitride film. The decrease in the time constant at temperatures below 300 K compared to that at temperatures above 573 K suggested that trapping-mediated adsorption takes place at temperatures below 300 K.

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