论文信息 - A submicron PHEMT nonlinear model suitable for RFID low current amplifier design

A submicron PHEMT nonlinear model suitable for RFID low current amplifier design

A new nonlinear submicron double heterostructure PHEMT model is presented that is suitable for low current application. It is found that this model accurately predicts the bias-dependent S-parameters for PHEMT up to 40 GHz, and good agreement is obtained between simulated and measured results for 2.45 GHz and 5.8 GHz amplifiers.

Hong Wang | Choi Look Law | Sheel Aditya | Zhongxiang Shen | Jianjun Gao

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