Atomic structure of conducting nanofilaments in TiO2 resistive switching memory.

[1]  H. Takagi,et al.  Inhomogeneous chemical states in resistance-switching devices with a planar-type Pt/CuO/Pt structure , 2009 .

[2]  C. Hwang,et al.  The conical shape filament growth model in unipolar resistance switching of TiO2 thin film , 2009 .

[3]  Jung-Hyun Lee,et al.  Electrical manipulation of nanofilaments in transition-metal oxides for resistance-based memory. , 2009, Nano letters.

[4]  F. Zeng,et al.  Fully room-temperature-fabricated nonvolatile resistive memory for ultrafast and high-density memory application. , 2009, Nano letters.

[5]  D. Ielmini,et al.  Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices , 2009, IEEE Transactions on Electron Devices.

[6]  R. Waser,et al.  Characteristic electroforming behavior in Pt/TiO2/Pt resistive switching cells depending on atmosphere , 2008 .

[7]  Hidenori Takagi,et al.  Resistance Switching and Formation of a Conductive Bridge in Metal/Binary Oxide/Metal Structure for Memory Devices , 2008 .

[8]  Kailash Gopalakrishnan,et al.  Overview of candidate device technologies for storage-class memory , 2008, IBM J. Res. Dev..

[9]  J. Yang,et al.  Memristive switching mechanism for metal/oxide/metal nanodevices. , 2008, Nature nanotechnology.

[10]  A. Sawa.  Resistive switching in transition metal oxides , 2008 .

[11]  D. Stewart,et al.  The missing memristor found , 2008, Nature.

[12]  G. I. Meijer,et al.  Who Wins the Nonvolatile Memory Race? , 2008, Science.

[13]  S. Rhee,et al.  Resistance Switching Behaviors of Hafnium Oxide Films Grown by MOCVD for Nonvolatile Memory Applications , 2008 .

[14]  R. Waser,et al.  Nanoionics-based resistive switching memories. , 2007, Nature materials.

[15]  Dmitri B. Strukov,et al.  Prospects for the development of digital CMOL circuits , 2007, 2007 IEEE International Symposium on Nanoscale Architectures.

[16]  R. Waser,et al.  Coexistence of Bipolar and Unipolar Resistive Switching Behaviors in a Pt ∕ TiO2 ∕ Pt Stack , 2007 .

[17]  Byung Joon Choi,et al.  Anode-interface localized filamentary mechanism in resistive switching of TiO2 thin films , 2007 .

[18]  K. Kinoshita,et al.  Consideration of switching mechanism of binary metal oxide resistive junctions using a thermal reaction model , 2007 .

[19]  Byung Joon Choi,et al.  Resistive Switching in Pt ∕ Al2O3 ∕ TiO2 ∕ Ru Stacked Structures , 2006 .

[20]  C. Hwang,et al.  First-principles study of point defects in rutileTiO2−x , 2006 .

[21]  R. Waser,et al.  Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3 , 2006, Nature materials.

[22]  S. Fonash,et al.  High-performance nonhydrogenated nickel-induced laterally crystallized P-channel poly-Si TFTs , 2005, IEEE Electron Device Letters.

[23]  I. Yoo,et al.  Resistance switching of the nonstoichiometric zirconium oxide for nonvolatile memory applications , 2005, IEEE Electron Device Letters.

[24]  Byung Joon Choi,et al.  Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition , 2005 .

[25]  Byung Joon Choi,et al.  Identification of a determining parameter for resistive switching of TiO2 thin films , 2005 .

[26]  H. Hwang,et al.  Resistance-switching Characteristics of polycrystalline Nb/sub 2/O/sub 5/ for nonvolatile memory application , 2005 .

[27]  S. Seo,et al.  Reproducible resistance switching in polycrystalline NiO films , 2004 .

[28]  Y. Le Page,et al.  Electrical conductance of crystalline TinO2n-1 for n=4-9 , 1983 .

[29]  M. Marezio,et al.  Metal-insulator transitions in Ti 4 O 7 single crystals: Crystal characterization, specific heat, and electron paramagnetic resonance , 1976 .

[30]  Hyunsang Hwang,et al.  Resistance-switching Characteristics of polycrystalline Nb/sub 2/O/sub 5/ for nonvolatile memory application , 2005, IEEE Electron Device Letters.

[31]  B. Hyde,et al.  Crystallographic shear in the higher titanium oxides: Structure, texture, mechanisms and thermodynamics , 1972 .