Influences of reactor pressure of GaN buffer layers on morphological evolution of GaN grown by MOCVD
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J. P. Liu | W. Zheng | H. Yang | Juye Zhu | X. Shen | G. Feng | Y. Wang | Juntao Zhu | Junkai Liu | S. Zhang | Bingxing Zhang | J. Chen | Baowen Zhang | Xiao-Meng Shen | Yushu Wang | S. Zhang | Jie Chen