Due to several advancements in the technology trends in electronics, the reliability prediction by the constant failure methods and standards no longer provide accurate time to failure. The physics of failure methodology provides a detailed insight on the operation, failure point location and causes of failure for old, existing and newly developed components with consideration of failure mechanisms. Since safety is a major criteria for the nuclear industries, the failure modeling of advanced custom made critical components that exists on signal conditioning module are need to be studied with higher confidence. One of the components, constant fraction discriminator, is the critical part at which the failure phenomenon and modeling by regression is studied in this paper using physics of failure methodology.
[1]
Gerard C. M. Meijer,et al.
The temperature characteristics of bipolar transistors fabricated in CMOS technology
,
2000
.
[2]
R. L. Pease,et al.
Hardness assurance testing of bipolar junction transistors at elevated irradiation temperatures
,
1997
.
[3]
Ronald D. Schrimpf.
Recent advances in understanding total-dose effects in bipolar transistors
,
1995
.
[4]
Xiaojun Li,et al.
Electronic circuit reliability modeling
,
2006,
Microelectron. Reliab..
[5]
Daniel M. Fleetwood,et al.
Charge separation in bipolar transistors
,
1993
.