论文信息 - The Effect of Flow Ratio between Elements of Groups III and V on the Structure and Properties of InGaAs Layers Grown by Low-Temperature Molecular-Beam Epitaxy - 字舞流文

The Effect of Flow Ratio between Elements of Groups III and V on the Structure and Properties of InGaAs Layers Grown by Low-Temperature Molecular-Beam Epitaxy

V. Preobrazhenskii | M. D. Vilisova | M. Putyato | B. Semyagin | I. V. Ivonin | S. Subach | B. Bobrovnikova | L. G. Lavrent'yeva