DC and RF performance of GaAs MESFET fabricated on silicon substrate using epitaxial lift-off technique

GaAs MESFETs have been fabricated on a silicon substrate using a molecular beam epitaxy grown film detached from its growth substrate and attached on a silicon substrate covered with a dielectric. The device processing is done on the silicon substrate. The MESFETs exhibit IDSS = 130 mA/mm, gm=135 mS/mm and for 1.3 μm gate length unity current gain cut-off frequency fτ of 12 GHz. Excellent device isolation with subpicoampere leakage currents is obtained.