论文信息 - Line edge roughness: characterization, modeling and impact on device behavior

Line edge roughness: characterization, modeling and impact on device behavior

Simple analytical expressions are presented, which calculate the impact of line edge roughness on MOSFET parameter fluctuations. It is experimentally demonstrated that LER has no impact on 80 nm gate length transistors. Simulations show LER to become significant for 32 nm channel length devices.

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