MBE growth of low-threshold long-wavelength QD lasers on GaAs substrates

Recent results on molecular-beam epitaxy growth of the quantum dot InGaAs/GaAs heterostructures for long-wavelength lasers on GaAs substrates are presented. As a result of optimization of the growth procedure for active region and emitter layers low-threshold current density (45 - 80 A/cm2) long-wavelength (1.27 - 1.3 μm) laser diodes may be fabricated with high reproducibility.