论文信息 - Design of Current Sensors in IGBT's

Design of Current Sensors in IGBT's

Summary form only given. The operation of current sensors (or pilots) in IGBTs (insulated-gate bipolar transistors) is described experimentally and with two-dimensional simulations. Two different sensor structures are compared. In the most conventional structure, a small IGBT, separated from the main device by metallization only, is used as a current sensor (or pilot) and the emitter of this small IGBT is connected to ground via a resistor. As the voltage at the emitter of the current sensor increases due to increasing current flow, the forward drop across the current sensor decreases and the ratio between the main current and the sensor current decreases. Experimentally, the dependence of the normalized current sensor (or pilot) voltage on the main IGBT current of a 500-V, n-channel, asymmetric IGBT has been shown to be fairly linear, except when a small main current or a large pilot resistor is used. The main-to-pilot current ratio increases with increasing carrier lifetime and increasing distance from the main IGBT. >

[1] J.S.T. Huang. An analytical model for LDD drain structures , 1988 .

[2] Michael S. Shur,et al. New short-channel n-MOSFET current-voltage model in strong inversion and unified parameter extraction method , 1991 .

[3] J. T. Clemens,et al. Characterization of the electron mobility in the inverted <100> Si surface , 1979, 1979 International Electron Devices Meeting.

[4] Y.A. El-Mansy,et al. A simple two-dimensional model for IGFET operation in the saturation region , 1977, IEEE Transactions on Electron Devices.

[5] Wu-Shiung Feng,et al. An analytical CMOS inverter delay model including channel-length modulations , 1992 .

[6] H. Sibbert,et al. Model and performance of hot-electron MOS transistors for VLSI , 1979 .

[7] R. Gharabagi,et al. A charge-based model for short-channel MOS transistor capacitances , 1990 .

[8] M. El-Nokali,et al. A simple analytical model for hot-carrier MOSFETs , 1989 .

[9] S. G. Chamberlain,et al. Analytic and iterative transit-time models for VLSI MOSFETs in strong inversion , 1990 .

[10] Bing J. Sheu,et al. BSIM: Berkeley short-channel IGFET model for MOS transistors , 1987 .