论文信息 - A compact charge-based MOSFET model for circuit simulation

A compact charge-based MOSFET model for circuit simulation

This paper presents a physically based model for the MOS transistors suitable for design and simulation of integrated circuits. The static and dynamic characteristics of the MOSFET are accurately described by single-piece functions of the inversion charge densities at source and drain. A new compact and physical approach to short-channel effects is presented. We have run some tests to compare the performances of our model and widely used MOSFET models.

C. Galup-Montoro | A.I.A. Cunha | M.C. Schneider | O.C.G. Filho

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