2.5 W CW X-band heterojunction bipolar transistor

A 2.43-W CW (continuous wave) output power was obtained with AlGaAs-GaAs heterojunction bipolar transistors at 10 GHz with 5.8-dB gain and 30% power-added efficiency using 2- mu m minimum-geometry devices. The device design and fabrication techniques were improved to maintain high power density (>3 W/mm of emitter length) operation as the device size is increased. Accurate device models were developed both for common-emitter and common-base devices to aid in this size scaling.<<ETX>>

[1]  N. Camilleri,et al.  Microwave performances of n.p.n. and p.n.p. AlGaAs/GaAs heterojunction bipolar transistors , 1988, 1988., IEEE MTT-S International Microwave Symposium Digest.

[2]  N. Camilleri,et al.  MICROWAVE PERFORMANCES OF npn AND pnp AlGaAs/GaAs HETEROJUNCTION BIPOLAR TRANSISTORS , 1988 .

[3]  P. Asbeck,et al.  High power GaAlAs/GaAs HBTs for microwave applications , 1987, 1987 International Electron Devices Meeting.

[4]  N. Camilleri,et al.  AlGaAs/GaAs Heterojunction Bipolar Transistors with 4W/mm Power Density at X-Band , 1987, 1987 IEEE MTT-S International Microwave Symposium Digest.

[5]  N. Camilleri,et al.  AlGaAs/GaAs Heterojunction Bipolar Transistors For Power Applications , 1987, IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1987. Proceedings..