Voltage driving circuit of semiconductor memory apparatus

1. the art that the invention defined in the claims A voltage drive circuit for a semiconductor memory device. 2. The invention attempts to solve the technical challenges Selectively supplying the plurality of voltages when a voltage is driven in accordance with the mode in the semiconductor memory device. 3. Resolution of the subject matter of the invention, The semiconductor memory device for performing an operation mode and a standby mode, and a memory circuit provided, and having a first threshold voltage during the standby mode, the Mohs transistors having a first threshold voltage for the operating mode the Mohs transistor, for generating a first voltage a first generator and a second switch connected between a first switch coupled between a second generator for generating the first voltage and a second, different voltage, the first generator and the memory circuit, a second generator and a memory circuit is composed of a first switch and is commonly connected to a mode signal control terminal of the second switch to supply the first voltage in the operation mode memory circuit supplies the second voltage to the memory circuit when the standby mode. 4. An important use of the invention, Hameuroseo having a plurality of voltage generating means and selecting the appropriate supply voltage in accordance with the mode in the semiconductor memory device, can be removed, the leakage current due to dressy Hall voltage.