Combined magnetic- and circuit-level enhancements for the nondestructive self-reference scheme of STT-RAM
暂无分享,去创建一个
Yiran Chen | Wei Xu | Xiaobin Wang | Tong Zhang | Hai Li | Wenzhong Zhu
[1] Yiran Chen,et al. A nondestructive self-reference scheme for Spin-Transfer Torque Random Access Memory (STT-RAM) , 2010, 2010 Design, Automation & Test in Europe Conference & Exhibition (DATE 2010).
[2] J. Otani,et al. A high-density and high-speed 1T-4MTJ MRAM with Voltage Offset Self-Reference Sensing Scheme , 2006, 2006 IEEE Asian Solid-State Circuits Conference.
[3] M. Hosomi,et al. A novel nonvolatile memory with spin torque transfer magnetization switching: spin-ram , 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..
[4] Hiroshi Kano,et al. Thermal activation effect on spin transfer switching in magnetic tunnel junctions , 2005 .
[5] J. Katine,et al. Time-resolved reversal of spin-transfer switching in a nanomagnet. , 2004, Physical review letters.
[6] S.O. Park,et al. MRAM with novel shaped cell using synthetic anti-ferromagnetic free layer , 2004, Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004..
[7] Y. Hwang,et al. A 0.24-μm 2.0-V 1T1MTJ 16-kb nonvolatile magnetoresistance RAM with self-reference sensing scheme , 2003, IEEE J. Solid State Circuits.
[8] Kinam Kim,et al. Memory Technologies for sub-40nm Node , 2007, 2007 IEEE International Electron Devices Meeting.
[9] Saied N. Tehrani,et al. Recent developments in magnetic tunnel junction MRAM , 2000 .
[10] Ping Wang,et al. Variability in sub-100nm SRAM designs , 2004, IEEE/ACM International Conference on Computer Aided Design, 2004. ICCAD-2004..