Investigation of Low Doped n-Type and p-Type 3C-SiC Layers Grown on 6H-SiC Substrates by Sublimation Epitaxy
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M. Syväjärvi | R. Yakimova | Jianwu Sun | R. Vasiliauskas | S. Juillaguet | J. Camassel | M. Beshkova | H. Peyre | G. Zoulis
[1] E. V. Bogdanova,et al. Highly doped p-type 3C–SiC on 6H–SiC substrates , 2008 .
[2] S. Juillaguet,et al. Application of LTPL Investigation Methods to CVD-Grown SiC† , 2006 .
[3] K. Itoh,et al. Optical and Electrical Characterization of Free-Standing 3C-SiC Films Grown on Undulant 6in Si Substrates , 2002 .
[4] W. J. Choyke,et al. Multiple Bound Exciton Associated with the Nitrogen Donor in 3C Silicon Carbide , 1998 .
[5] W. J. Choyke,et al. Time Resolved PL Study of Multi Bound Excitons in 3C SiC , 1997 .
[6] W. J. Choyke,et al. Aluminum acceptor four particle bound exciton complex in 4H, 6H, and 3C SiC , 1993 .
[7] J. Camassel,et al. Stress effects on excitons bound to neutral acceptors in InP , 1984 .