A ZnO/ZnMgO Multiple-Quantum-Well Ultraviolet Random Laser Diode

A ZnO/ZnMgO multiple-quantum-well ultraviolet (UV) random laser diode was fabricated on a commercially available n-type GaN wafer using a radio frequency magnetron sputtering system. The electroluminescence measurements revealed that the diode exhibited fairly pure UV random lasing centered at ~370 nm under sufficient forward bias at room temperature. The full-widths at half-maximum of the sharp lasing peaks are less than 0.4 nm. The device has a very low threshold current density of 4.7 A/cm2 and extremely weak visible emission.

[1]  R. Service Will UV Lasers Beat the Blues? , 1997, Science.

[2]  Robert P. H. Chang,et al.  Ultraviolet lasing in resonators formed by scattering in semiconductor polycrystalline films , 1998 .

[3]  H. C. Ong,et al.  FAR-FIELD CHARACTERISTICS OF RANDOM LASERS , 1999 .

[4]  Robert P. H. Chang,et al.  Random laser action in semiconductor powder , 1999 .

[5]  G. Fang,et al.  Fabrication and characterization of ZnxMg1−xO thin films by dc magnetron sputtering with a composite target of AZO and Mg , 2003 .

[6]  Z. Valy Vardeny,et al.  Random lasing in human tissues , 2004 .

[7]  S. Lau,et al.  Zinc oxide thin-film random lasers on silicon substrate , 2004 .

[8]  Clement Yuen,et al.  Random laser action in ZnO nanorod arrays embedded in ZnO epilayers , 2004 .

[9]  Eunice S. P. Leong,et al.  Directional edge-emitting UV random laser diodes , 2006 .

[10]  Eunice S. P. Leong,et al.  UV Random Lasing Action in p‐SiC(4H)/i‐ZnO–SiO2 Nanocomposite/n‐ZnO:Al Heterojunction Diodes , 2006 .

[11]  Xiangyang Ma,et al.  Electrically pumped ZnO film ultraviolet random lasers on silicon substrate , 2007 .

[12]  Sheng Chu,et al.  Electrically pumped ultraviolet ZnO diode lasers on Si , 2008 .

[13]  Xingzhong Zhao,et al.  ZnO-Based Fairly Pure Ultraviolet Light-Emitting Diodes With a Low Operation Voltage , 2009, IEEE Electron Device Letters.

[14]  Xiangyang Ma,et al.  Electrically pumped ultraviolet random lasing from ZnO-based metal-insulator-semiconductor devices: dependence on carrier transport. , 2009, Optics express.

[15]  Xiangyang Ma,et al.  Room temperature electrically pumped ultraviolet random lasing from ZnO nanorod arrays on Si. , 2009, Optics express.

[16]  Michael S. Shur,et al.  Efficiency droop in 245–247 nm AlGaN light-emitting diodes with continuous wave 2 mW output power , 2010 .

[17]  D. Shen,et al.  Low‐Threshold Electrically Pumped Random Lasers , 2010, Advanced materials.

[18]  D. Shen,et al.  Ultraviolet electroluminescence from ZnO-based heterojunction light-emitting diodes fabricated on p-GaAs substrate , 2010 .