论文信息 - A low-permittivity interconnection using an SiBN interlayer

A low-permittivity interconnection using an SiBN interlayer

A low-permittivity two-level interconnection process is presented. The key features of this process are the use of a low dielectric constant SiBN interlayer and the adoption of planarization using a two-stage etch-back process. The SiBN film is characterized from the standpoint of its device applications. The two-level interconnection process flow is described in detail. The effect of the SiBN interlayer in reducing the second wiring capacitance is compared to that of a conventional silicon nitride interlayer. This is demonstrated by fabricating a 33-stage ECL ring oscillator and a 2.1 kG macrocell array LSI. >

[1] R. R. Mehta,et al. The Preparation and Properties of Thin Film Silicon‐Nitrogen Compounds Produced by a Radio Frequency Glow Discharge Reaction , 1967 .

[2] Masahiko Maeda,et al. Electrical properties and their thermal stability for silicon nitride films prepared by plasma‐enhanced deposition , 1982 .

[3] F. White,et al. Mechanisms of Plasma‐Enhanced Silicon Nitride Deposition Using SiH4 / N 2 Mixture , 1981 .

[4] A. K. Sinha,et al. Kinetics of the Slow‐Trapping Instability at the Si / SiO2 Interface , 1978 .

[5] A. K. Sinha,et al. Electrical properties of Si‐N films deposited on silicon from reactive plasma , 1978 .

[6] Y. Kuwano. Some Properties of Silicon Nitride Films Produced by Radio Frequency Glow Discharge Reaction of Silane and Nitrogen , 1969 .

[7] M. Aoki,et al. Chemical vapour deposition of thin films of BN onto fused silica and sapphire , 1981 .

[8] T. Makino,et al. Low Dielectric Constant Amorphous SiBN Ternary Films Prepared by Plasma-Enhanced Deposition , 1987 .

[9] Hyman Joseph Levinstein,et al. Thermal stresses and cracking resistance of dielectric films (SiN, Si3N4, and SiO2) on Si substrates , 1978 .

[10] M. Maeda,et al. Insulation degradation and anomalous etching phenomena in silicon nitride films prepared by plasma-enhanced deposition , 1984 .

[11] S. Motojima,et al. Low temperature deposition of hexagonal BN films by chemical vapour deposition , 1982 .