A Comparative Scaling Analysis of Metallic and Carbon Nanotube Interconnections for Nanometer Scale VLSI Technologies

This paper addresses the critical issue of scaling limits of local interconnects, contact plugs and local vias made of metal. It is shown that the current carrying capacity of copper vias/contacts fails to meet ITRS current density requirements beyond the 45 nm technology node. Additionally, the electrical properties of local interconnects/vias made of carbon nanotube (CNT) arrays are analyzed in comparison with copper and process technology requirements are laid out that would make interconnects composed of CNT arrays a viable solution to meet the challenges of nanometer scale interconnects.

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