论文信息 - Deterministic simulation of SiGe HBTs based on the Boltzmann equation

Deterministic simulation of SiGe HBTs based on the Boltzmann equation

In this paper, a deterministic approach to electron transport based on the spherical harmonics expansion of the Boltzmann equation is presented for SiGe heterojunction bipolar transistors. In order to take into account the position-dependent minima of the valleys of the conduction band, a new formulation of the discretized scattering integral for non-aligned and non-equidistant energy grids is developed. The Early voltage and the cutoff frequency are calculated for an HBT with a realistic doping profile. The difference between the results of the Boltzmann equation and the momentum-based transport models is analyzed.

Sung-Min Hong | C. Jungemann | C. Jungemann | Sung-Min Hong

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