A novel polysilicon light source and its on-chip optical interconnection structure design

The rapid advancement of microelectronics technology places higher demands on the interconnection of integrated circuits. The continuous reduction of the critical dimension in the microelectronics fabrication process has led to an increase in the power consumption of the metal interconnect lines. There are many advantages of the on-chip optical interconnect structure, like high speed or low power consumption. Therefore it is one of the best alternatives to the metal interconnect process. GaAlAs/ GaAs is used to make light sources of common optical interconnect structures and these light sources are poorly compatible with CMOS processes. In this paper, we designs a new structure of silicon-based avalanche light source (SBALS), which has the advantages of being compatible with CMOS technology, based on the existing theory of SBALS. And we preliminarily design an on-chip optical interconnect structure by SBALS, which is proposed for optical interconnects in integrated circuits.

[1]  Lukas W. Snyman,et al.  Higher Intensity SiAvLEDs in an RF Bipolar Process Through Carrier Energy and Carrier Momentum Engineering , 2015, IEEE Journal of Quantum Electronics.

[2]  Gong-Ru Lin,et al.  Wavelength-Shifted Yellow Electroluminescence of Si Quantum-Dot Embedded 20-Pair SiNx/SiOx Superlattice by Ostwald Ripening Effect , 2013, IEEE Photonics Journal.

[3]  M. Morschbach,et al.  Visible Light Emission by a Reverse-Biased Integrated Silicon Diode , 2007, IEEE Transactions on Electron Devices.

[4]  S. E. Kerns,et al.  PHOTON GENERATION BY SILICON DIODES IN AVALANCHE BREAKDOWN , 1998 .

[5]  Lukas W. Snyman,et al.  Si light-emitting device in integrated photonic CMOS ICs , 2017 .

[6]  E. Bellotti,et al.  Temperature characteristics of hot electron electroluminescence in silicon. , 2015, Optics express.

[7]  Lukas W. Snyman,et al.  Stimulating 600–650 nm Wavelength Optical Emission in Monolithically Integrated Silicon LEDs Through Controlled Injection-Avalanche and Carrier Density Balancing Technology , 2017, IEEE Journal of Quantum Electronics.

[8]  R. Newman,et al.  Visible Light from a Silicon p − n Junction , 1955 .

[9]  Lukas W. Snyman,et al.  Towards 10-40 GHz on-chip micro-optical links with all integrated Si Av LED optical sources, Si N based waveguides and Si-Ge detector technology , 2014, Photonics West - Optoelectronic Materials and Devices.

[10]  O Jambois,et al.  Towards population inversion of electrically pumped Er ions sensitized by Si nanoclusters. , 2010, Optics express.