论文信息 - Explorations for high performance SiGe-heterojunction bipolar transistor integration

Explorations for high performance SiGe-heterojunction bipolar transistor integration

Presents a SiGe HBT integration-study, introducing a low-complexity integration-scheme. We demonstrate a stepped box-like SiGe base-profile designed to reduce reverse Early effects, achieving f/sub T/=55 GHz and BV/sub CEO/=2.7 V. The transistor characteristics are well modeled by Mextram 504.

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