4500 V IEGTs having switching characteristics superior to GTO
暂无分享,去创建一个
Akio Nakagawa | Tomoki Inoue | Shigeru Hasegawa | Kenichi Matsushita | H. Takenaka | A. Nakagawa | Akihiro Yahata | M. Kitagawa | Mitsuhiko Kitagawa | H. Takenaka | K. Matsushita | T. Inoue | S. Hasegawa | A. Yahata
[1] Ichiro Omura,et al. Injection Efficiency Enhancement in Dynamic Trench Gate Emitter (DTGE) for 4500 V MOS Gate Transistor (IEGT) , 1994 .
[2] Ichiro Omura,et al. A 4500 V injection enhanced insulated gate bipolar transistor (IEGT) operating in a mode similar to a thyristor , 1993, Proceedings of IEEE International Electron Devices Meeting.
[3] I. Omura,et al. 4.5 kV GTO turn-off failure analysis under an inductive load including snubber, gate circuit and various parasitics , 1992, Proceedings of the 4th International Symposium on Power Semiconductor Devices and Ics.